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Si4916DY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ.
Max.
Typ.
Max.
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
54
32
65
38
47
30
60
35
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 112 °C/W for Channel 1 and 107 °C/W for Channel 2.
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS
V GS = 0 V, I D = 250 μA
Ch-1
Ch-2
30
30
V
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
Gate Threshold Voltage
Δ V DS /T J
Δ V GS(th) /T J
V GS(th)
I D = 250 μA
V DS = V GS , I D = 250 μA
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
1.5
1.5
24
25
-6
-6
3.0
2.7
mV/°C
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current b
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 85 °C
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 10 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
20
20
0.0145
100
100
1
100
15
2000
0.018
nA
μA
A
Drain-Source On-State Resistance b
R DS(on)
V GS = 10 V, I D = 10.5 A
V GS = 4.5 V, I D = 8.5 A
Ch-2
Ch-1
0.015
0.019
0.018
0.023
Ω
V GS = 4.5 V, I D = 9.3 A
Ch-2
0.018
0.022
Forward Transconductance b
g fs
V DS = 15 V, I D = 10 A
V DS = 15 V, I D = 10.5 A
Ch-1
Ch-2
30
35
S
Diode Forward Voltage b
V SD
I S = 1.7 A, V GS = 0 V
I S = 1 A, V GS = 0 V
Ch-1
Ch-2
0.75
0.47
1.1
0.5
V
Dynamic a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q g
Q gs
Q gd
Channel-1
V DS = 15 V, V GS = 4.5 V, I D = 10 A
Channel-2
V DS = 15 V, V GS = 4.5 V, I D = - 10.5 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
6.6
8.9
2.9
3.4
2.3
2.4
10
14
nC
Gate Resistance
R g
Ch-1
Ch-2
0.5
0.5
1.9
2.3
2.9
3.5
Ω
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Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
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